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Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade
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SYSNO ASEP 0469811 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Evaluation of bulk and surface radiation damage of silicon sensors for the ATLAS upgrade Author(s) Mikeštíková, Marcela (FZU-D) RID, ORCID
Kotek, Zdeněk (FZU-D)
Šťastný, Jan (FZU-D) RID, ORCIDArticle number 050 Source Title Proceedings of Science. Vertex2014. - Trieste : Proceedings of Science (PoS), 2014 - ISSN 1824-8039 Pages s. 1-11 Number of pages 11 s. Publication form Online - E Action International Workshop on Vertex Detectors /23./. (Vertex 2014) Event date 15.09.2014 - 19.09.2014 VEvent location Doksy Country CZ - Czech Republic Event type WRD Language eng - English Country IT - Italy Keywords microstrip detector ; radiation damage ; ATLAS upgrade ; gamma ray irradiation ; p irradiation Subject RIV BF - Elementary Particles and High Energy Physics R&D Projects LG13009 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) 7E12050 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 Annotation The electrical characteristics of different types of end-cap miniature n + -in- p strip sensors, ATLAS12A, were evaluated in Institute of Physics in Prague before and after proton and gamma irradiation. We report here on the bulk damage aspects, including the increase of leakage current and evaluation of the full depletion voltage and the surface damage, including the decrease of inter-strip resistance, changes in inter-strip capacitance and the effectiveness of punch-through protection structure. It was verified that different geometries of end-cap sensors do not influence their stability; the sensors should provide acceptable strip isolation and n ew gate PTP structure functions well even at the highest tested proton fluence 2× 10 15 n eq / cm 2. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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