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The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation
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SYSNO ASEP 0461487 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The properties of samarium-doped zinc oxide/phthalocyanine structure for optoelectronics prepared by pulsed laser deposition and organic molecular evaporation Author(s) Novotný, Michal (FZU-D) RID, ORCID, SAI
Marešová, Eva (FZU-D) ORCID
Fitl, Přemysl (FZU-D) RID, ORCID
Vlček, Jan (FZU-D) RID, ORCID
Bergmann, M. (CZ)
Vondráček, Martin (FZU-D) RID, ORCID
Yatskiv, Roman (URE-Y) RID, ORCID
Bulíř, Jiří (FZU-D) RID, ORCID, SAI
Hubík, Pavel (FZU-D) RID, ORCID
Hruška, Petr (FZU-D) ORCID
Drahokoupil, Jan (FZU-D) RID, ORCID
Abdellaoui, N. (FR)
Vrňata, M. (CZ)
Lančok, Ján (FZU-D) RID, ORCIDArticle number 225 Source Title Applied Physics A - Materials Science & Processing. - : Springer - ISSN 0947-8396
Roč. 122, č. 3 (2016), 1-8Number of pages 8 s. Language eng - English Country DE - Germany Keywords samarium-doped zinc oxide zinc/phthalocyanine deposition ; evaporation ; pulsed laser deposition ; thin films Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LG15050 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GAP108/11/0958 GA ČR - Czech Science Foundation (CSF) LM2011029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA14-10279S GA ČR - Czech Science Foundation (CSF) 7AMB14FR010 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 ; URE-Y - RVO:67985882 UT WOS 000371041700084 EID SCOPUS 84959308205 DOI 10.1007/s00339-016-9759-6 Annotation Samarium-doped zinc oxide (ZnO:Sm)/zinc phthalocyanine (ZnPc) thin film multilayer structure was prepared by combination of pulsed laser deposition (PLD)and organic molecular evaporation (OME). ZnO:Sm thin film was grown by PLD (Nd:YAG, k = 266 nm, s = 6 ns) from Sm2O3:ZnO (1 % Sm) target in oxygen ambient at pressure of 10 and 20 Pa at room temperature on fused silica and Si(100) substrates. ZnPc thin film was deposited on ZnO:Sm layer by OME. ZnO:Sm films of c-axis-oriented hexagonal wurtzite structure and a-form ZnPc were obtained. Emission of intra-4f transition in Sm3+ ions and photoluminescence enhancement of near-band-edge emission of ZnO in ZnO:Sm/ZnPc were observed. Electrical properties were not affected by Sm3? dopant as ZnO:Sm film exhibited high electrical resistivity *5 9 104 X cm.
Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2017
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