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Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules
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SYSNO ASEP 0459785 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Graphene Field-Effect Transistor as a Probe of Doping by Adsorbed Oxygen Molecules Author(s) Blechta, Václav (UFCH-W) RID, ORCID
Mergl, Martin (UFCH-W)
Drogowska, Karolina (UFCH-W) RID
Kučera, Lukáš (UFCH-W)
Valeš, Václav (UFCH-W) RID, ORCID
Červenka, Jiří (FZU-D) RID, ORCID
Kalbáč, Martin (UFCH-W) RID, ORCIDSource Title XXXVI. Moderní elektrochemické metody. Sborník přednášek. - Ústí nad Labem : Best servis, 2016 / Navrátil T. ; Fojta M. ; Schwarzová K. - ISBN 978-80-905221-4-5 Pages s. 18-22 Number of pages 5 s. Publication form Print - P Action Moderní elektrochemické metody /36./ Event date 23.05.2016 - 27.05.2016 VEvent location Jetřichovice Country CZ - Czech Republic Event type WRD Language eng - English Country CZ - Czech Republic Keywords graphene ; sensor ; transistor Subject RIV CG - Electrochemistry R&D Projects GA13-21704S GA ČR - Czech Science Foundation (CSF) GBP208/12/G016 GA ČR - Czech Science Foundation (CSF) Institutional support UFCH-W - RVO:61388955 ; FZU-D - RVO:68378271 UT WOS 000389898200003 Annotation Graphene has high potential in chemical sensing, thus understanding adsorption and charge transfer between graphene and adsorbed molecules is essential. We show that graphene field-effect transistor exhibits a moderate sensoric response towards oxygen at temperature of 150 °C. Field-effect transistors serve as a tool to probe electronic properties of graphene. We demonstrate that adsorption of oxygen molecules onto graphene leads to an upshift of Dirac point and light changes in mobility of charge carriers. Workplace J. Heyrovsky Institute of Physical Chemistry Contact Michaela Knapová, michaela.knapova@jh-inst.cas.cz, Tel.: 266 053 196 Year of Publishing 2017
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