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The structural and optical properties of metal ion-implanted GaN
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SYSNO ASEP 0459130 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The structural and optical properties of metal ion-implanted GaN Author(s) Macková, Anna (UJF-V) RID, ORCID, SAI
Malinský, Petr (UJF-V) RID, ORCID, SAI
Sofer, Z. (CZ)
Šimek, P. (CZ)
Sedmidubský, D. (CZ)
Veselý, M. (CZ)
Bottger, R. (DE)Number of authors 7 Source Title Nuclear Instruments & Methods in Physics Research Section B. - : Elsevier - ISSN 0168-583X
Roč. 371, MAR (2016), s. 254-257Number of pages 4 s. Publication form Print - P Action 22nd International conference on Ion Beam Analysis (IBA) Event date 14.06.2015 - 19.06.2015 VEvent location Opatija Country HR - Croatia Event type WRD Language eng - English Country NL - Netherlands Keywords RBS channelling ; metal-implanted GaN ; structural changes Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders R&D Projects LM2011019 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GA15-01602S GA ČR - Czech Science Foundation (CSF) Institutional support UJF-V - RVO:61389005 UT WOS 000373412000049 EID SCOPUS 84960349335 DOI 10.1016/j.nimb.2015.10.015 Annotation he practical development of novel optoelectronic materials with appropriate optical properties is strongly connected to the structural properties of the prepared doped structures. We present GaN layers oriented along the (0001) crystallographic direction that have been grown by low-pressure metal-organic vapour-phase epitaxy (MOVPE) on sapphire substrates implanted with 200 keV Co+, Fe+ and Ni+ ions. The structural properties of the ion-implanted layers have been characterised by RBS-channelling and Raman spectroscopy to obtain a comprehensive insight into the structural modification of implanted GaN layers and to study the subsequent influence of annealing on crystalline-matrix recovery. Photoluminescence was measured to control the desired optical properties. The post-implantation annealing induced the structural recovery of the modified GaN layer depending on the introduced disorder level, e.g. depending on the ion implantation fluence, which was followed by structural characterisation and by the study of the surface morphology by AFM. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2017
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