Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

0456491 - FZÚ 2016 RIV NL eng J - Journal Article
Kim, D.Y. - Guijt, E. - Si, F.T. - Santbergen, R. - Holovský, Jakub - Isabella, O. - van Swaaij, R.A.C.M.M. - Zeman, M.
Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell.
Solar Energy Materials and Solar Cells. Roč. 141, Oct (2015), s. 148-153. ISSN 0927-0248. E-ISSN 1879-3398
R&D Projects: GA MŠMT 7E12029
EU Projects: European Commission(XE) 283501 - Fast Track
Institutional support: RVO:68378271
Keywords : multi-junction solar cel * a-SiOx:H * high voc * current matching
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 4.732, year: 2015

We investigate the potential of intrinsic a-SiOx:H, with a band gap of 2.07 eV, as absorber material in thin-film silicon solar cells. Single junction a-SiOx:H cells with an i-layer thickness of 100–200 nm can have a high Voc and FF of up to 1.04 V and 0.74, respectively. This makes this device interesting for application as the first sub-cell in multi-junction devices. We fabricate two types of triple-junction (3J) solar cells, which consist of the second sub-cell of either a-Si:H (Eg≈1.7 eV) or nc-Si:H (Eg≈1.1 eV), with the nc-Si:H third sub-cell. In both 3J solar cells current mismatching can be reduced with a thin a-SiOx:H first sub-cell (≈100 nm) such that its high Voc×FF product can be fully used. An initial efficiency as high as 12.58% was obtained (Voc: 2.37 V, Jsc: 7.27 mA/cm2 and FF: 0.73) for the a-SiOx:H/a-Si:H/nc-Si:H 3J solar cell. This efficiency is competitive with the efficiency of other types of 3J solar cells.
Permanent Link: http://hdl.handle.net/11104/0257004