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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur

  1. 1.
    SYSNO ASEP0448576
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JČlánek ve WOS
    TitleSilicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
    Author(s) Bagraev, N.T. (RU)
    Danilovskii, E.Yu. (RU)
    Gets, D.S. (RU)
    Kalabukhova, E.N. (UA)
    Klyachkin, L.E. (RU)
    Koudryavtsev, A.A. (RU)
    Malyarenko, A.M. (RU)
    Mashkov, V.A. (RU)
    Savchenko, Dariia (FZU-D) RID, ORCID
    Shanina, B.D. (UA)
    Source TitleSemiconductors - ISSN 1063-7826
    Roč. 49, č. 5 (2015), 649-657
    Number of pages9 s.
    Languageeng - English
    CountryRU - Russian Federation
    Keywordselectron spin resonance ; 6H-SiC nanostructures ; silicon vacancy related centers ; NV centers
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGP13-06697P GA ČR - Czech Science Foundation (CSF)
    LM2011029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    Institutional supportFZU-D - RVO:68378271
    UT WOS000354103400018
    EID SCOPUS84928898748
    DOI10.1134/S1063782615050036
    AnnotationWe present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency gen- eration from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2016
Number of the records: 1  

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