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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur
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SYSNO ASEP 0448576 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur Author(s) Bagraev, N.T. (RU)
Danilovskii, E.Yu. (RU)
Gets, D.S. (RU)
Kalabukhova, E.N. (UA)
Klyachkin, L.E. (RU)
Koudryavtsev, A.A. (RU)
Malyarenko, A.M. (RU)
Mashkov, V.A. (RU)
Savchenko, Dariia (FZU-D) RID, ORCID
Shanina, B.D. (UA)Source Title Semiconductors - ISSN 1063-7826
Roč. 49, č. 5 (2015), 649-657Number of pages 9 s. Language eng - English Country RU - Russian Federation Keywords electron spin resonance ; 6H-SiC nanostructures ; silicon vacancy related centers ; NV centers Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GP13-06697P GA ČR - Czech Science Foundation (CSF) LM2011029 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000354103400018 EID SCOPUS 84928898748 DOI 10.1134/S1063782615050036 Annotation We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the δ-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency gen- eration from the δ-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2016
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