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MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors

  1. SYS0448239
    LBL
      
    02642^^^^^2200409^^^450
    005
      
    20240103210753.0
    014
      
    $a 84901499901 $2 SCOPUS
    014
      
    $a 000336256200009 $2 WOS
    017
    70
    $a 10.1088/1742-6596/508/1/012009 $2 DOI
    100
      
    $a 20151008d m y slo 03 ba
    101
    0-
    $a eng
    102
      
    $a GB
    200
    1-
    $a MeV ion beams generated by intense pulsed laser monitored by Silicon Carbide detectors
    215
      
    $a 6 s. $c E
    463
    -1
    $1 001 cav_un_epca*0448240 $1 011 $a 1742-6588 $1 200 1 $a Journal of Physics: Conference Series. Vol. 508 $v Č. 012009 $1 210 $a Bristol $c IOP Publishing $d 2014
    610
    0-
    $a MeV ions
    610
    0-
    $a plasma
    610
    0-
    $a SiC detector
    610
    0-
    $a PALS
    700
    -1
    $3 cav_un_auth*0294864 $4 070 $a Calcagno $b L. $y IT
    701
    -1
    $3 cav_un_auth*0274395 $4 070 $a Musumeci $b P. $y IT
    701
    -1
    $3 cav_un_auth*0281256 $4 070 $a Cutroneo $b M. $y IT
    701
    -1
    $3 cav_un_auth*0014440 $4 070 $a Torrisi $b L. $y IT
    701
    -1
    $3 cav_un_auth*0297159 $4 070 $a La Via $b F. $y IT
    701
    -1
    $3 cav_un_auth*0294853 $i Výkonové systémy $j High power systems $4 070 $a Ullschmied $b Jiří $p FZU-D $T Fyzikální ústav AV ČR, v. v. i.
Number of the records: 1  

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