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Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping
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SYSNO ASEP 0432332 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Fabrication of SnS quantum dots for solar-cell applications: issues of capping and doping Author(s) Rath, J.K. (NL)
Prastani, C. (NL)
Nanu, D.E. (NL)
Nanu, M. (NL)
Schropp, R.E.I. (NL)
Vetushka, Aliaksi (FZU-D) RID, ORCID
Hývl, Matěj (FZU-D) ORCID
Fejfar, Antonín (FZU-D) RID, ORCID, SAISource Title Physica Status Solidi B : Basic Solid State Physics. - : Wiley - ISSN 0370-1972
Roč. 251, č. 7 (2014), s. 1309-1321Number of pages 13 s. Language eng - English Country DE - Germany Keywords chalcogenides ; chemical bath deposition ; core-shell particles ; quantum dots ; solar cells ; tin sulfide Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA13-25747S GA ČR - Czech Science Foundation (CSF) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) Institutional support FZU-D - RVO:68378271 UT WOS 000339665200003 EID SCOPUS 84904060362 DOI 10.1002/pssb.201350377 Annotation We present our recent study on SnS particles in the backdrop of significant developements that have taken place so far for which a review of the present status of this material, its structural, optical, electronic characteristics, and device performence is described. To further improve the performance of low-cost chalcogenide-based solar cells, we propose to employ a third-generation solar cells fabrication scheme, where an intermediate bandgap layer can be incorporated in a CIS solar cell to increase its current generation and efficiency. For this purpose SnS quantum dots (QD) embedded indium sulfide layer is developed. We address how to cap the QD surface for defect passivation and protection from ambient and the doping nature of the particles. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
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