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Study of silicon nanostructures by microscopic methods
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SYSNO ASEP 0432079 Document Type D - Thesis R&D Document Type The record was not marked in the RIV Title Study of silicon nanostructures by microscopic methods Author(s) Hývl, Matěj (FZU-D) ORCID Issue data Praha: ČVUT, 2014 Number of pages 72 s. Publication form Print - P Language eng - English Country CZ - Czech Republic Keywords silicon nanostructures ; AFM ; Raman intensity mapping ; nanoindentation ; radial junctions ; Si NWs ; LPC polycrystalline silicon thin films Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects FR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO) GA13-12386S GA ČR - Czech Science Foundation (CSF) LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) GB14-37427G GA ČR - Czech Science Foundation (CSF) Institutional support FZU-D - RVO:68378271 Annotation Silicon-based nanostructures belong among the most important structures for electronics and photovoltaics. In our work, we focus on description and studies of two types silicon nanostructures, primarily designed for the use as photovoltaic cells. Using microscopic methods such as atomic force microscopy (AFM) and Raman spectroscopy, we examine the electrical properties of radial junctions based on silicon nanowires and thin polycrystalline silicon films created by a liquid phase crystallization. With the help of conductive AFM and Kelvin probe force microscopy, we investigate mainly the electronic properties of grain boundaries in thin silicon films and individual radial junctions based on Si nanowires. We also examine the possibilities of nanoindentation technique for marking the sample in order to be able to characterize the sample with different methods on the same place, such as Raman intensity maps or confocal microscopy and AFM measurements. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2015
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