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Study of silicon nanostructures by microscopic methods

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    SYSNO ASEP0432079
    Document TypeD - Thesis
    R&D Document TypeThe record was not marked in the RIV
    TitleStudy of silicon nanostructures by microscopic methods
    Author(s) Hývl, Matěj (FZU-D) ORCID
    Issue dataPraha: ČVUT, 2014
    Number of pages72 s.
    Publication formPrint - P
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordssilicon nanostructures ; AFM ; Raman intensity mapping ; nanoindentation ; radial junctions ; Si NWs ; LPC polycrystalline silicon thin films
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsFR-TI2/736 GA MPO - Ministry of Industry and Trade (MPO)
    GA13-12386S GA ČR - Czech Science Foundation (CSF)
    LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GB14-37427G GA ČR - Czech Science Foundation (CSF)
    Institutional supportFZU-D - RVO:68378271
    AnnotationSilicon-based nanostructures belong among the most important structures for electronics and photovoltaics. In our work, we focus on description and studies of two types silicon nanostructures, primarily designed for the use as photovoltaic cells. Using microscopic methods such as atomic force microscopy (AFM) and Raman spectroscopy, we examine the electrical properties of radial junctions based on silicon nanowires and thin polycrystalline silicon films created by a liquid phase crystallization. With the help of conductive AFM and Kelvin probe force microscopy, we investigate mainly the electronic properties of grain boundaries in thin silicon films and individual radial junctions based on Si nanowires. We also examine the possibilities of nanoindentation technique for marking the sample in order to be able to characterize the sample with different methods on the same place, such as Raman intensity maps or confocal microscopy and AFM measurements.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2015
Number of the records: 1  

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