Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

Hospodková, Alice; Pangrác, Jiří; Zíková, Markéta; Oswald, Jiří; Vyskočil, Jan; Komninou, Ph.; Kioseoglou, J.; Florini, N.; Hulicius, Eduard

doi:https://dx.doi.org/10.1016/j.apsusc.2014.02.033

Number of the records: 1

Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots

1.

SYSNO ASEP	0431316
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Článek ve WOS
Title	Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Zíková, Markéta (FZU-D)_RID Oswald, Jiří (FZU-D)_{RID, ORCID} Vyskočil, Jan (FZU-D)_RID Komninou, Ph. (GR) Kioseoglou, J. (GR) Florini, N. (GR) Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI}
Source Title	Applied Surface Science. - : Elsevier - ISSN 0169-4332 Roč. 301, SI (2014), 173-177
Number of pages	5 s.
Language	eng - English
Country	NL - Netherlands
Keywords	quantum dots ; InAs ; GaAs ; GaAsSb ; reflectance anisotropy spectroscopy
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA13-15286S GA ČR - Czech Science Foundation (CSF)
	LM2011026 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
	7AMB12GR034 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
UT WOS	000335095600027
EID SCOPUS	84897916367
DOI	10.1016/j.apsusc.2014.02.033
Annotation	The aim of this work is to influence QD formation by improving the lower and upper InAs/GaAs QD interface quality. Lower interface: a good epitaxial surface planarity is required for QD formation with high QD density and narrow size distribution. We demonstrate the improvement of the QD size distribution and homogeneity, when the growth rate of the buffer layer was decreased. Upper interface formed during the covering process: InAs quantum dots were capped by GaAs or by GaAsSb. The presence of Sb atoms in covering layer strongly influences the interface abruptness. In the case of GaAs covering layer, an InGaAs layer with gradual decrease of In concentration is unintentionally formed at the interface between InAs and GaAs. The presence of Sb in GaAsSb covering layer helps to form abrupt interface between InAs and covering layer. An optimal GaAsSb composition profile is suggested to prevent dissolution of QDs during the covering process and to minimize the amount of surfacting In atoms.
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2015

Number of the records: 1