Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used

Number of the records: 1

1.

SYSNO	0424992
Title	Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
Author(s)	Pham, T.T. (VN) Stuchlíková, The-Ha (FZU-D)_{RID, ORCID} Ledinský, Martin (FZU-D)_{RID, ORCID, SAI} Hruška, Karel (FZU-D)_{RID, ORCID} Le, V.T.H. (VN) Stuchlík, Jiří (FZU-D)_{RID, ORCID}
Source Title	ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). - Cairn : IPCS International Plasma Chemistry Society, 2013
Conference	International Symposium on Plasma Chemistry (ISPC 21)/21./, Cairns Convention Centre, 04.08.2013-09.08.2013
Document Type	Konferenční příspěvek (zahraniční konf.)
Grant	M100101216, CZ - Czech Republic
	M100101217, CZ - Czech Republic
	GA203/09/1088 GA ČR - Czech Science Foundation (CSF)
	LH12236 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
Institutional support	FZU-D - RVO:68378271
Language	eng
Country	AU
Keywords	Si:H thin film * ZnO * PECVD * catalytic effect * Si-NWs
URL	http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
Permanent Link	http://hdl.handle.net/11104/0230960

Number of the records: 1