Number of the records: 1
Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
SYS 0424992 LBL 02250^^^^^2200409^^^450 005 20240103203903.7 100 $a 20140211d m y slo 03 ba 101 0-
$a eng 102 $a AU 200 1-
$a Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used 215 $a 4 s. $c E 463 -1
$1 001 cav_un_epca*0395661 $1 010 $a N $1 200 1 $a ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21) $1 205 $a 21 $1 210 $a Cairn $c IPCS International Plasma Chemistry Society $d 2013 $1 225 $a IPSC $v 21 610 0-
$a Si:H thin film 610 0-
$a ZnO 610 0-
$a PECVD 610 0-
$a catalytic effect 610 0-
$a Si-NWs 700 -1
$3 cav_un_auth*0300635 $a Pham $b T.T. $y VN $4 070 701 -1
$3 cav_un_auth*0100534 $a Stuchlíková $b The-Ha $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100351 $a Ledinský $b Martin $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0247345 $a Hruška $b Karel $i Spintronika a nanoelektronika $j Spintronics and Nanoelectronics $p FZU-D $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0300636 $a Le $b V.T.H. $y VN $4 070 701 -1
$3 cav_un_auth*0100533 $a Stuchlík $b Jiří $i Tenké vrstvy a nanostruktury $j Thin Films and Nanostructures $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 856 $u http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
Number of the records: 1