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Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used
- 1.PHAM, T.T., STUCHLÍKOVÁ, T.-H., LEDINSKÝ, M., HRUŠKA, K., LE, V.T.H., STUCHLÍK, J. Deposition of Si:H thin films on transparent and conductive ZnOat boundary parameters of PECVD if Sn as catalyst element is used. In: ISPC - Proceedings International Symposium on Plasma Chemistry (ISPC 21). Cairn: IPCS International Plasma Chemistry Society, 2013. IPSC, 21. ISBN N. Available: http://www.ispc-conference.org/ispcproc/ispc21/ID396.pdf
Number of the records: 1