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Oxygen Precipitation in CZ Si Wafers after High Temperature
- 1.0421395 - ÚFM 2014 RIV CZ eng C - Conference Paper (international conference)
Meduňa, M. - Caha, O. - Kuběna, J. - Kuběna, A. - Svoboda, Milan - Buršík, Jiří
Oxygen Precipitation in CZ Si Wafers after High Temperature.
SILICON 2010. 12th Scientific and Business Conference. Rožnov pod Radhoštěm: TECON Scientific, s.r.o., 2010 - (Vojtěchovský, K.). ISBN 978-80-254-7361-0.
[Scientific and Business Conference SILICON 2010 /12./. Rožnov pod Radhoštěm (CZ), 02.11.2010-05.11.2010]
Institutional support: RVO:68081723
Keywords : oxygen precipitation * Si wafers
Subject RIV: BM - Solid Matter Physics ; Magnetism
In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques.
Permanent Link: http://hdl.handle.net/11104/0228230
Number of the records: 1