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Rapid thermal synthesis of GaN nanocrystals and nanodisks
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SYSNO ASEP 0393052 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Rapid thermal synthesis of GaN nanocrystals and nanodisks Author(s) Sofer, Z. (CZ)
Sedmidubský, D. (CZ)
Huber, Š. (CZ)
Šimek, P. (CZ)
Šaněk, F. (CZ)
Jankovský, O. (CZ)
Gregorová, E. (CZ)
Fiala, R. (CZ)
Matějková, Stanislava (UOCHB-X) RID, ORCID
Mikulics, M. (DE)Number of authors 10 Source Title Journal of Nanoparticle Research. - : Springer - ISSN 1388-0764
Roč. 15, č. 1 (2013), 1411/1-1411/7Number of pages 7 s. Language eng - English Country NL - Netherlands Keywords gallium nitride ; thermal ammonolysis ; nanodisks ; nanocrystals Subject RIV CF - Physical ; Theoretical Chemistry Institutional support UOCHB-X - RVO:61388963 UT WOS 000318550000094 EID SCOPUS 84871733414 DOI 10.1007/s11051-012-1411-6 Annotation Gallium nitride materials are at the forefront of nanoelectronic research due to their importance for UV optoelectronics. In this contribution, we present a facile and well-controlled synthesis of GaN nanodisks by rapid thermal ammonolysis of complex gallium fluoride precursor. We observed the formation of GaN nanodisks in 150 s at 800 degrees C. The structural properties of GaN were investigated by X-ray diffraction, Raman spectroscopy, and micro-photoluminescence. The morphology of GaN was investigated by scanning electron microscopy and the magnetic properties by superconducting quantum interference device (SQUID) techniques. The morphology of nanodisks was strongly influenced by the temperature of synthesis. The structure characterization shows a high concentration of defects related mainly to the vacancies of N and Ga. The magnetic measurement by SQUID shows paramagnetic behavior induced by structure defects. These findings have a strong implication on the construction of modern optoelectronic nanodevices. Workplace Institute of Organic Chemistry and Biochemistry Contact asep@uochb.cas.cz ; Kateřina Šperková, Tel.: 232 002 584 ; Jana Procházková, Tel.: 220 183 418 Year of Publishing 2014
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