Number of the records: 1
Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation
- 1.
SYSNO ASEP 0389613 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Silicon nanocrystals as light sources: stable, efficient and fast photoluminescence with suitable passivation Author(s) Kůsová, Kateřina (FZU-D) RID, ORCID Source Title International Journal of Nanotechnology - ISSN 1475-7435
Roč. 9, 8/9 (2012), s. 717-731Number of pages 15 s. Language eng - English Country GB - United Kingdom Keywords silicon nanocrystals ; surface passivation ; photoluminescence ; lasing Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects IAA101120804 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KJB100100903 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000303800500005 DOI 10.1504/IJNT.2012.046750 Annotation In this contribution, we present a study of silicon nanocrystals as light sources. We compare the photoluminescence properties of silicon nanocrystals with three different types of surface passivation (hydrogen, silicon oxide and methyl-based capping), which has substantial impact. We show that with sufficiently small sizes and suitable surface passivation, the photoluminescence properties of silicon nanocrystals can reach a level comparable with direct-bandgap semiconductor nanocrystals (radiative lifetime of 10 ns, stable macroscopic quantum yield of 20%). Apart from studying photoluminescence properties on a macroscopic level, we also carried out microscopical room-temperature single-nanocrystal photoluminescence spectroscopy experiments. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2013
Number of the records: 1