InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Number of the records: 1

1.

SYSNO	0373041
Title	InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
Author(s)	Hospodková, Alice (FZU-D)_{RID, ORCID, SAI} Hulicius, Eduard (FZU-D)_{RID, ORCID, SAI} Oswald, Jiří (FZU-D)_{RID, ORCID} Pangrác, Jiří (FZU-D)_{RID, ORCID, SAI} Hazdra, P. (CZ) Caha, O. (CZ) Vyskočil, Jan (FZU-D)_RID Kuldová, Karla (FZU-D)_{RID, ORCID}
Source Title	The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. S. 68. - Warren : American Association for Crystal Growth, 2009
Conference	US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./, Lake Geneva, Wisconsin, 09.08.2009-14.08.2009
Document Type	Abstrakt
Grant	GA202/09/0676 GA ČR - Czech Science Foundation (CSF)
Language	eng
Country	US
Keywords	low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
Permanent Link	http://hdl.handle.net/11104/0006873

Number of the records: 1