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InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots
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SYSNO ASEP 0373041 Document Type A - Abstract R&D Document Type The record was not marked in the RIV R&D Document Type Není vybrán druh dokumentu Title InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots Author(s) Hospodková, Alice (FZU-D) RID, ORCID, SAI
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Hazdra, P. (CZ)
Caha, O. (CZ)
Vyskočil, Jan (FZU-D) RID
Kuldová, Karla (FZU-D) RID, ORCIDSource Title The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. - Warren : American Association for Crystal Growth, 2009 - ISBN N.
S. 68Number of pages 1 s. Action US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./ Event date 09.08.2009-14.08.2009 VEvent location Lake Geneva, Wisconsin Country US - United States Event type WRD Language eng - English Country US - United States Keywords low dimensional structures ; photoluminescence ; low-pressure MOVPE ; InAs/GaAs quantum dots ; semiconducting III/V materials Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA202/09/0676 GA ČR - Czech Science Foundation (CSF) Annotation We compare properties of InAs/GaAs quantum dots (QDs) covered by InGaAs or GaAsSb strain reducing layers (SRLs) prepared by metal organic vapor phase epitaxy. Stronger red shift of QD emission was achieved with InGaAs SRL as compared to GaAsSb one with similar strain in the structure.This can be caused by the increase of QD size during InGaAs SRL growth. The heterojunction between InAs QDs and GaAsSb SRL changes from type I to type II between 13% and 15% of Sb in the SRL. Important advantage of GaAsSb SRL can be the possibility to change the overlap of electron and hole wave functions and QD dipole moment orientation by the composition of GaAsSb. We have achieved the highest PL intensity suggesting best wave function overlap near 13% of Sb in the SRL. Band alignment, transition probability and transition energy were modeled to help the interpretation of achieved results. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
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