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The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode

  1. 1.
    SYSNO0370779
    TitleThe deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode
    Author(s) Huguenin-Love, J.L. (US)
    Lauer, N.T. (US)
    Soukup, R. J. (US)
    Ianno, N.J. (US)
    Kment, Štěpán (FZU-D) RID, ORCID
    Hubička, Zdeněk (FZU-D) RID, ORCID, SAI
    Source Title Materials Science Forum. 645-648, 1-2 (2010), s. 131-134
    Conference International Conference on Silicon Carbide and Related Materials Location /13./, Nurnberg, 11.10.2009-16.10.2009
    Document TypeČlánek v odborném periodiku
    CEZAV0Z10100522 - FZU-D (2005-2011)
    Languageeng
    CountryCH
    Keywords sputtering * pulse * germanium * 3C
    Permanent Linkhttp://hdl.handle.net/11104/0204474
     
Number of the records: 1  

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