Number of the records: 1
The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode
- 1.
SYSNO ASEP 0370779 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The deposition of 3C-SiC thin films onto the (111) and (110) faces of Si using pulsed sputtering of a hollow cathode Author(s) Huguenin-Love, J.L. (US)
Lauer, N.T. (US)
Soukup, R. J. (US)
Ianno, N.J. (US)
Kment, Štěpán (FZU-D) RID, ORCID
Hubička, Zdeněk (FZU-D) RID, ORCID, SAISource Title Materials Science Forum - ISSN 0255-5476
645-648, 1-2 (2010), s. 131-134Number of pages 4 s. Action International Conference on Silicon Carbide and Related Materials Location /13./ Event date 11.10.2009-16.10.2009 VEvent location Nurnberg Country DE - Germany Event type WRD Language eng - English Country CH - Switzerland Keywords sputtering ; pulse ; germanium ; 3C Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z10100522 - FZU-D (2005-2011) UT WOS 000279657600030 DOI 10.4028/www.scientific.net/MSF.645-648.131 Annotation Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2012
Number of the records: 1