Number of the records: 1
Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO(2)
- 1.
SYSNO ASEP 0365920 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Specific features of depth distribution profiles of implanted cobalt ions in rutile TiO(2) Author(s) Achkeev, A. A. (RU)
Khaibullin, R. I. (RU)
Tagirov, L.R. (RU)
Macková, Anna (UJF-V) RID, ORCID, SAI
Hnatowicz, Vladimír (UJF-V) RID
Cherkashin, N. (FR)Number of authors 6 Source Title Physics of the Solid State. - : Pleiades Publishing - ISSN 1063-7834
Roč. 53, č. 3 (2011), s. 543-553Number of pages 11 s. Language eng - English Country RU - Russian Federation Keywords ROOM-TEMPERATURE FERROMAGNETISM ; SEMICONDUCTORS ; OXIDE Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects GA106/09/0125 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10480505 - UJF-V (2005-2011) UT WOS 000288175100018 DOI 10.1134/S1063783411030024 Annotation This paper reports on the results of the calculation of the depth distribution profiles of the concentration of the impurity implanted into an anisotropic crystalline material. The sputtering of the irradiated material, fast one-dimensional diffusion of the impurity along structural channels, and accumulation of the implanted impurity at different depths have been taken into account. The results of the calculations have been compared with the experimental distribution profiles of cobalt ions implanted into the crystal structure of rutile TiO(2) along and across structural channels at different temperatures of the irradiated substrate. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2012
Number of the records: 1