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Development of n-on-p silicon sensors for very high radiation environments
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SYSNO ASEP 0361396 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Development of n-on-p silicon sensors for very high radiation environments Author(s) Unno, Y. (JP)
Affolder, A.A. (GB)
Allport, P.P. (GB)
Bates, R. (GB)
Betancourt, C. (US)
Böhm, Jan (FZU-D)
Brown, H. (GB)
Buttar, C. (GB)
Carter, J. R. (GB)
Casse, G. (GB)
Mikeštíková, Marcela (FZU-D) RID, ORCIDNumber of authors 74 Source Title Nuclear Instruments & Methods in Physics Research Section A. - : Elsevier - ISSN 0168-9002
Roč. 636, č. 1 (2011), "S24"-"S30"Number of pages 7 s. Language eng - English Country NL - Netherlands Keywords silicon ; micro-strip ; ATLAS ; SLHC ; sensor ; radiation damage ; p-type ; n-in-p Subject RIV BF - Elementary Particles and High Energy Physics R&D Projects LA08032 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z10100502 - FZU-D (2005-2011) UT WOS 000291416400005 DOI 10.1016/j.nima.2010.04.080 Annotation We have developed a novel and highly radiation-tolerant n-in-p silicon microstrip sensor for very high radiation environments such as in the Super Large Hadron Collider. The sensors are designed for a fluence of 1×1015 neq/cm2 and are fabricated from p-type, FZ, 6 in. (150 mm) wafers onto which we lay out a single 9.75 cm×9.75 cm large-area sensor and several 1 cm×1 cm miniature sensors with various n-strip isolation structures. By evaluating the sensors both pre- and post-irradiation by protons and neutrons, we find that the full depletion voltage evolves to approximately 800 V and that the n-strip isolation depends on the p+ concentration. In addition, we characterize the interstrip resistance, interstrip capacitance and the punch-through-protection (PTP) voltage. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2013
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