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X-ray diffraction analysis of multilayer porous InP(001) structure
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SYSNO ASEP 0351779 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title X-ray diffraction analysis of multilayer porous InP(001) structure Author(s) Lomov, A. A. (RU)
Punegov, V. I. (RU)
Vasil'ev, A. L. (RU)
Nohavica, Dušan (URE-Y)
Gladkov, Petar (URE-Y)
Kartsev, A. A. (DE)
Novikov, D. V. (DE)Number of authors 7 Source Title Crystallography Reports. - : Pleiades Publishing - ISSN 1063-7745
Roč. 55, č. 2 (2010), s. 182-190Number of pages 9 s. Language eng - English Country RU - Russian Federation Keywords silicon layers ; INP Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering CEZ AV0Z20670512 - URE-Y (2005-2011) UT WOS 000276507600003 DOI 10.1134/S1063774510020033 Annotation The porous structures were formed by anodic oxidation of InP(001) substrates in aqueous HCl solution. The structural parameters of the sublayers were varied by changing the electrochemical etching mode (potentiostatic/galvanostatic). The X-ray scattering intensity maps near the InP 004 reflection are obtained. A model for scattering from such systems is proposed based on the statistical dynamical diffraction theory. Theoretical scattering maps have been fitted to the experimental ones. It is shown that a mathematical analysis of the scattering intensity maps makes it possible to determine the structural parameters of sublayers. The reconstructed parameters (thickness, strain, and porosity of sublayers and the shape and arrangement of pores) are in satisfactory agreement with the scanning electron microscopy data. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2011
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