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Growth and characterization of YAG and LuAG epitaxial films for scintillation applications
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SYSNO ASEP 0349166 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Growth and characterization of YAG and LuAG epitaxial films for scintillation applications Author(s) Kučera, M. (CZ)
Nitsch, Karel (FZU-D) RID
Nikl, Martin (FZU-D) RID, ORCID, SAI
Hanus, M. (CZ)
Daniš, S. (CZ)Source Title Journal of Crystal Growth. - : Elsevier - ISSN 0022-0248
Roč. 312, č. 9 (2010), s. 1538-1545Number of pages 8 s. Language eng - English Country NL - Netherlands Keywords luminescence ; liquid phase epitaxy ; Ce doping ; YAG ; LuAG ; scintillator materials Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KAN300100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000277530200013 DOI 10.1016/j.jcrysgro.2010.01.023 Annotation The epitaxial films of Ce3+-doped yttrium and lutetium aluminum garnets, Y3Al5O12 and Lu3Al5O12, were grown by the liquid phase epitaxy from fluxes of various compositions, i.e. PbO–B2O3, BaO–BaF2– B2O3, and MoO3–Li2MoO4. Growth, film morphology, and structural, optical and emission properties of the films were studied. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2011
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