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Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface
- 1.Mikhailova, M. P., Ivanov, E.V., Moiseev, K. D., Yakovlev, Y. P., Hulicius, E., Hospodková, A., Pangrác, J., Šimeček, T. Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface. Semiconductors. 2010, 44(1), 66-71. ISSN 1063-7826. E-ISSN 1090-6479. Available: doi: 10.1134/S1063782610010100
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