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Fourier transform photocurrent measurement of thin silicon films on rough, conductive and opaque substrates

  1. 1.
    SYSNO ASEP0338185
    Document TypeA - Abstract
    R&D Document TypeNení vybrán druh dokumentu
    TitleFourier transform photocurrent measurement of thin silicon films on rough, conductive and opaque substrates
    TitleFourierovské fotovodivostní měření tenkých vrstev amorfního křemíku na hrubých opticky neprůhledných a vodivých substrátech
    Author(s) Holovský, Jakub (FZU-D) RID, ORCID
    Ižák, T. (SK)
    Poruba, Aleš (FZU-D) RID
    Vaněček, Milan (FZU-D) RID
    Hamers, E.A.G. (NL)
    Source TitleICANS23 - 23rd International Conference on Amorphous and Nanocrystaline Semiconductors. Book of Abstracts. - Utrecht : Utrecht University, 2009 - ISBN N
    S. 332-332
    Number of pages1 s.
    ActionInternational Conference on Amorphous and Nanocrystaline Semiconductors /23./ (ICANS23)
    Event date23.08.2009-28.08.2009
    VEvent locationUtrecht
    CountryNL - Netherlands
    Event typeWRD
    Languageeng - English
    CountryNL - Netherlands
    Keywordsthin film silicon ; photoconductivity ; optical modeling
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA202/09/0417 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z10100521 - FZU-D (2005-2011)
    AnnotationFourier transform photocurrent spectroscopy (FTPS) is used as an inspection method for thin films of hydrogenated amorphous silicon deposited on aluminium foil and aluminium foil coated with rough SnO2. These structures are part of roll-to-roll solar cell fabrication process. Measurement technique utilizes transparent electrode in a sandwich arrangement. An elaborate calculation procedure is used to correct the measurement for the optical effects in order to obtain spectra of optical absorption coefficient. Correction procedure is based partly on analytical formulae and partly on Monte-Carlo simulations. We compared quality of thin layers deposited by PECVD on glass and aluminium foil with and without rough layer of SnO2. We observed positive effect of aluminium and SnO2 on layer quality and effect of bandgap shift.
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2010
Number of the records: 1  

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