Number of the records: 1
The origin and control of the sources of AMR in (Ga,Mn)As devices
- 1.
SYSNO ASEP 0335861 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title The origin and control of the sources of AMR in (Ga,Mn)As devices Title Příčiny a způsob ovládání AMR v součástkách z (Ga,Mn)As Author(s) Rushforth, A.W. (GB)
Výborný, Karel (FZU-D) RID, ORCID
King, C.S. (GB)
Edmonds, K. W. (GB)
Campion, R. P. (GB)
Foxon, C. T. (GB)
Wunderlich, J. (GB)
Irvine, A.C. (GB)
Novák, Vít (FZU-D) RID, ORCID
Olejník, Kamil (FZU-D) RID, ORCID
Kovalev, A.A. (US)
Sinova, J. (US)
Jungwirth, Tomáš (FZU-D) RID, ORCID
Gallagher, B. L. (GB)Number of authors 14 Source Title Journal of Magnetism and Magnetic Materials. - : Elsevier - ISSN 0304-8853
Roč. 321, č. 8 (2009), s. 1001-1008Number of pages 8 s. Language eng - English Country NL - Netherlands Keywords ferromagnetic semiconductor ; anisotropic magnetoresistance Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GEFON/06/E002 GA ČR - Czech Science Foundation (CSF) GA202/05/0575 GA ČR - Czech Science Foundation (CSF) GA202/04/1519 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000264092400013 DOI 10.1016/j.jmmm.2008.04.070 Annotation We present details of our experimental and theoretical study of the components of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. We develop experimental methods to yield directly the non-crystalline and crystalline AMR components which are then independently analyzed. Simple analytical model of the non-crystalline AMR is derived. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2010
Number of the records: 1