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Secondary electron contrast in doped semiconductor with presence of a surface ad-layer
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SYSNO ASEP 0335263 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title Secondary electron contrast in doped semiconductor with presence of a surface ad-layer Author(s) Mika, Filip (UPT-D) RID, SAI, ORCID
Hovorka, Miloš (UPT-D)
Frank, Luděk (UPT-D) RID, SAI, ORCIDNumber of authors 3 Source Title MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. - Graz : Verlag der Technischen Universität, 2009 - ISBN 978-3-85125-062-6 Pages vol. 1: 199-200 Number of pages 2 s. Action MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./ Event date 30.08.2009-04.09.2009 VEvent location Graz Country AT - Austria Event type WRD Language eng - English Country AT - Austria Keywords dopant contrast ; secondary electrons ; semiconductor Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GP102/09/P543 GA ČR - Czech Science Foundation (CSF) IAA100650803 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z20650511 - UPT-D (2005-2011) Annotation The scanning electron microscopy (SEM) has proven itself efficient for determining dopant concentrations in semiconductors. Image contrast between differently doped areas is observable in the secondary electron emission. Multiple studies have revealed quantitative relations between the image contrast and dopant concentration. However, further examination shows the dopant contrast level of low reproducibility and dependent on additional factors like the primary electron dose, varying energy and angular distributions of the SE emission and also presence of an ad-layer on the semiconductor surface. Workplace Institute of Scientific Instruments Contact Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178 Year of Publishing 2010
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