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On the magnetic properties of Gd implanted GaN
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SYSNO ASEP 0313793 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title On the magnetic properties of Gd implanted GaN Title O magnetických vlastnostech Gd implantovaného GaN Author(s) Hejtmánek, J. (CZ)
Knížek, K. (CZ)
Maryško, M. (CZ)
Jirák, Z. (CZ)
Sedmidubský, D. (CZ)
Sofer, Z. (CZ)
Peřina, Vratislav (UJF-V) RID
Hardtdegen, H. (DE)
Buchal, C. (DE)Source Title Journal of Applied Physics. - : AIP Publishing - ISSN 0021-8979
Roč. 103, č. 7 (2008), 07D107/1-07D107/3Number of pages 3 s. Language eng - English Country US - United States Keywords GaN ; Curie-type ; FM Subject RIV BG - Nuclear, Atomic and Molecular Physics, Colliders CEZ AV0Z10480505 - UJF-V (2005-2011) UT WOS 000255043200387 DOI 10.1063/1.2830644 Annotation The wurzite type gallium nitride doped by gadolinium, Ga1-xGdxN (x similar to 0.01-0.07), was prepared by Gd ion implantation of the parent GaN thin films deposited on sapphire substrates. The material obtained exhibits a weak ferromagnetism (FM) persisting up to 700 K. At higher Gd concentrations, the minute FM component coexists with much more pronounced Curie-type paramagnetism. In a dilute limit (x <= 0.01), the latter part is substantially reduced and the saturated FM moment reaches the value M similar to 2 mu(B)/Gd atom. Workplace Nuclear Physics Institute Contact Markéta Sommerová, sommerova@ujf.cas.cz, Tel.: 266 173 228 Year of Publishing 2009
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