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Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As
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SYSNO ASEP 0312859 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Článek ve WOS Title Lithographically and electrically controlled strain effects on AMR in (Ga,Mn)As Title Litograficky a elektricky ovladane vlivy mechanickych deformaci na AMR v (Ga,Mn)As Author(s) De Ranieri, E. (GB)
Rushforth, A.W. (GB)
Výborný, Karel (FZU-D) RID, ORCID
Rana, U. (GB)
Ahmad, E. (GB)
Campion, R. P. (GB)
Foxon, C. T. (GB)
Gallagher, B. L. (GB)
Irvine, A.C. (GB)
Wunderlich, J. (GB)
Jungwirth, Tomáš (FZU-D) RID, ORCIDSource Title New Journal of Physics. - : Institute of Physics Publishing - ISSN 1367-2630
Roč. 10, č. 6 (2008), 065003/1-065003/19Number of pages 19 s. Language eng - English Country DE - Germany Keywords anomalous Hall effect ; Keldysh formalism ; Rashba system Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects LC510 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) KJB100100802 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) KAN400100652 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) GEFON/06/E002 GA ČR - Czech Science Foundation (CSF) CEZ AV0Z10100521 - FZU-D (2005-2011) UT WOS 000256657900001 DOI https://doi.org/10.1088/1367-2630/10/6/065003 Annotation We demonstrate experimentally that lithographically or electrically induced strain variations can produce crystalline AMR components which are larger than the crystalline AMR and a significant fraction of the total AMR of the unprocessed (Ga,Mn)As material. Complete phenomenological AMR expressions are derived and new higher order terms are reported in experiments. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2009
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