Number of the records: 1  

Electronic structure of indium-tin alloys

  1. 1.
    SYSNO ASEP0307353
    Document TypeK - Proceedings Paper (Czech conf.)
    R&D Document TypeConference Paper
    TitleElectronic structure of indium-tin alloys
    TitleElektronová struktura slitin india a cínu
    Author(s) Všianská, Monika (UFM-A)
    Legut, Dominik (UFM-A)
    Šob, Mojmír (UFM-A) RID, ORCID
    Source TitleVII. pracovní setkání fyzikálních chemiků a elektrochemiků. - Brno : Masarykova univerzita, 2007 / Trnková L. ; Janderka P. ; Kizek R. - ISBN 978-80-210-4235-3
    S. 135-137
    Number of pages3 s.
    ActionPracovní setkání fyzikálních chemiků a elektrochemiků /7./
    Event date29.01.2007-30.01.2007
    VEvent locationBrno
    CountryCZ - Czech Republic
    Event typeCST
    Languageeng - English
    CountryCZ - Czech Republic
    Keywordselectronic structure ; gamma-tin ; indium-tin alloys
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsIAA1041302 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    OC 147 GA MŠMT - Ministry of Education, Youth and Sports (MEYS)
    GD106/05/H008 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z20410507 - UFM-A (2005-2011)
    AnnotationThe In-Sn system is interesting due to the existence of the simple hexagonal (sh) structure for compositions from 75 to 87 at% Sn at 25 ºC and from 73 to 85 at% Sn at -150 ºC. These alloys are usually referred to as gamma-Sn. Here we study the electronic structure and total energy of gamma-Sn with the help of virtual crystal approximation and demonstrate that sh structure has the lowest energy in the interval of existence of gamma-tin.
    WorkplaceInstitute of Physics of Materials
    ContactYvonna Šrámková, sramkova@ipm.cz, Tel.: 532 290 485
    Year of Publishing2008
Number of the records: 1  

  This site uses cookies to make them easier to browse. Learn more about how we use cookies.