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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements
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SYSNO 0304148 Title High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements Author(s) Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)
Pekárek, Ladislav (FZU-D)
Procházková, Olga (URE-Y)
Kacerovský, Pavel (URE-Y)Source Title Physica Status Solidi C : Conferences and critical reviews. Roč. 0, č. 3 (2003), s. 862-866 Conference EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./, Budapest, 26.05.2002-29.05.2002 Type of action Workshop Document Type Článek v odborném periodiku Grant KSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Language eng Country DE Keywords semiconductors * photoluminescence * galvanomagnetic effects Permanent Link http://hdl.handle.net/11104/0114289
Number of the records: 1