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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

  1. 1.
    SYSNO ASEP0304148
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    R&D Document TypeW - Uspořádání workshopu
    Subsidiary JOstatní články
    TitleHigh temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements
    Author(s) Zavadil, Jiří (URE-Y) RID
    Žďánský, Karel (URE-Y)
    Pekárek, Ladislav (FZU-D)
    Procházková, Olga (URE-Y)
    Kacerovský, Pavel (URE-Y)
    Source TitlePhysica Status Solidi C : Conferences and critical reviews - ISSN 1610-1634
    Roč. 0, č. 3 (2003), s. 862-866
    Number of pages5 s.
    ActionEXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./
    Event typeW - Workshop
    Event date26.05.2002-29.05.2002
    VEvent locationBudapest
    CountryHU - Hungary
    Event typeEUR
    Languageeng - English
    CountryDE - Germany
    Keywordssemiconductors ; photoluminescence ; galvanomagnetic effects
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsKSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
    CEZAV0Z2067918 - URE-Y
    AnnotationCrystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing.
    WorkplaceInstitute of Radio Engineering and Electronics
    ContactPetr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488
    Year of Publishing2004

Number of the records: 1  

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