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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements
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SYSNO ASEP 0304148 Document Type J - Journal Article R&D Document Type Journal Article R&D Document Type W - Uspořádání workshopu Subsidiary J Ostatní články Title High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements Author(s) Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)
Pekárek, Ladislav (FZU-D)
Procházková, Olga (URE-Y)
Kacerovský, Pavel (URE-Y)Source Title Physica Status Solidi C : Conferences and critical reviews - ISSN 1610-1634
Roč. 0, č. 3 (2003), s. 862-866Number of pages 5 s. Action EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./ Event type W - Workshop Event date 26.05.2002-29.05.2002 VEvent location Budapest Country HU - Hungary Event type EUR Language eng - English Country DE - Germany Keywords semiconductors ; photoluminescence ; galvanomagnetic effects Subject RIV BM - Solid Matter Physics ; Magnetism R&D Projects KSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Annotation Crystals of intentionally undoped n-type InP and Mn doped p-type InP were grown by Czochralski technique. The as grown crystals and those processed by high temperature long time annealing were studied by low temperature photoluminescence and temperature dependent Hall measurements. A new broad band was observed in those undoped InP samples which were converted to semi-insulating state by annealing. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2004
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