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High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements

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    0304148 - URE-Y 20030099 RIV DE eng J - Journal Article
    Zavadil, Jiří - Žďánský, Karel - Pekárek, Ladislav - Procházková, Olga - Kacerovský, Pavel
    High temperature annealing of undoped and Mn doped InP: photoluminescence and Hall measurements.
    Physica Status Solidi C. Roč. 0, č. 3 (2003), s. 862-866. ISSN 1610-1634.
    [EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. Budapest, 26.05.2002-29.05.2002]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : semiconductors * photoluminescence * galvanomagnetic effects
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0114289
     

Number of the records: 1  

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