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Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE
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SYSNO 0303955 Title Origin of the photoluminescence line at 0.8 eV in undoped and Si-doped GaSb grown by MOVPE Author(s) Agert, C. (DE)
Gladkov, Petar (URE-Y)
Bett, A. W. (DE)Source Title Semiconductor Science and Technology. Roč. 17, č. 1 (2002), s. 39-46. - : Institute of Physics Publishing Document Type Článek v odborném periodiku CEZ AV0Z2067918 - URE-Y Language eng Country GB Keywords photoluminescence * silicon * epitaxial growth Permanent Link http://hdl.handle.net/11104/0114099
Number of the records: 1