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Role of ç-elements in the growth of InP layers for radiation detectors
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SYSNO ASEP 0303799 Document Type J - Journal Article R&D Document Type Journal Article R&D Document Type M - Uspořádání konference Subsidiary J Ostatní články Title Role of ç-elements in the growth of InP layers for radiation detectors Author(s) Procházková, Olga (URE-Y)
Zavadil, Jiří (URE-Y) RID
Žďánský, Karel (URE-Y)Source Title Crystal Research and Technology - ISSN 0232-1300
Roč. 36, 8/10 (2001), s. 979-987Number of pages 9 s. Action Polish Conference on Crystal Growth /PCCG 6./ Event type K - Konference Event date 20.05.2001-23.05.2001 VEvent location Poznan Country PL - Poland Event type EUR Language eng - English Country DE - Germany Keywords liquid phase epitaxial growth ; rare earth metals ; semiconductor materials Subject RIV JA - Electronics ; Optoelectronics, Electrical Engineering R&D Projects GA102/99/0341 GA ČR - Czech Science Foundation (CSF) KSK1010104 Projekt 04/01:4043 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR) CEZ AV0Z2067918 - URE-Y Annotation We report the effect of ç-elements (Er, Ho, Nd, Pr, Tb and Yb) during the LPE on the growth process and structural, electrical and optical properties of InP thick epitaxial layers for applications in ionizing radiation detector structures. Room temperature Hall effect measurements revealed p-type conductivity Tb, Pr or Yb admixture exceeding certain limiting concentration. These layers could readily be used for the preparation of ŕ-particles detector, when detection will be mediated via the depletion layer of high quality Schottky contact. Workplace Institute of Radio Engineering and Electronics Contact Petr Vacek, vacek@ufe.cz, Tel.: 266 773 413, 266 773 438, 266 773 488 Year of Publishing 2002
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