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Temperature dependence of electron hall concetration in n-type InP and n-type In.sub.0.5./sub.Ga.sub.0.5./sub.P

  1. 1.
    Žďánský, K., Procházková, O., Nohavica, D. Temperature dependence of electron hall concetration in n-type InP and n-type In0.5Ga0.5P. Beijing: [Institute of Semiconductors, Chinese Academy of Sciences], 1999. In: YU, J., ed. Proceedings The Second Chinese-Czech Symposium Advenced Materials and Devices for Optoelectronics. , s. 52-58.

Number of the records: 1  

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