Imaging of the boron doping in silicon using low energy SEM

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SYSNO ASEP	0205568
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Imaging of the boron doping in silicon using low energy SEM
Author(s)	Müllerová, Ilona (UPT-D)_{RID, SAI, ORCID} El-Gomati, M. (GB) Frank, Luděk (UPT-D)_{RID, SAI, ORCID}
Source Title	Ultramicroscopy. - : Elsevier - ISSN 0304-3991 Roč. 93, 3/4 (2002), s. 223 - 243
Number of pages	21 s.
Language	eng - English
Country	NL - Netherlands
Keywords	electron and ion microscopes ; semiconductor doping
Subject RIV	JA - Electronics ; Optoelectronics, Electrical Engineering
R&D Projects	IAA1065901 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	IBS2065017 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
CEZ	AV0Z2065902 - UPT-D
Annotation	Scanning electron imaging of plan views of boron-doped patterns in silicon is examined, together with the mechanism of formation of the electronic contrast in this kind of structures. Main to-date published results are critically reviewed and new data are presented concerning the secondary, backscattered and total-emission electron contrasts, including their qualitative and quantitative behaviour, particularly in the low energy range achieved with the help of the cathode lens (the scanning low energy electron microscopy mode, SLEEM).
Workplace	Institute of Scientific Instruments
Contact	Martina Šillerová, sillerova@ISIBrno.Cz, Tel.: 541 514 178
Year of Publishing	2003

Number of the records: 1