Number of the records: 1
Si.sup.+./sup. and Ge.sup.+./sup. ion implanted SiO.sub.2./sub. matices: photoluminescence peculiarities
SYS 0133635 LBL 00000nam^^22^^^^^^^^450 005 20200403114401.2 101 0-
$a eng 102 $a LT 200 1-
$a Si+ and Ge+ ion implanted SiO2 matices: photoluminescence peculiarities 215 $a 4 s. 463 -1
$1 001 cav_un_epca*0290024 $1 011 $a 1392-1932 $1 200 1 $a Lithuanian Journal of Physics $v Roč. 41, 4-6 (2001), s. 399-403 610 1-
$a nanocrystallites 610 1-
$a ion-implanted SiO2 610 1-
$a photoluminescence 700 -1
$3 cav_un_auth*0042078 $a Mikulskas $b I. $y LT $4 070 701 -1
$3 cav_un_auth*0047180 $a Šulcas $b R. $y LT $4 070 701 -1
$3 cav_un_auth*0047181 $a Vanagas $b E. $y LT $4 070 701 -1
$3 cav_un_auth*0014318 $a Tomašiunas $b R. $y LT $4 070 701 -1
$3 cav_un_auth*0100360 $a Luterová $b Kateřina $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0100444 $a Pelant $b Ivan $p FZU-D $w Thin Films and Nanostructures $4 070 $T Fyzikální ústav AV ČR, v. v. i. 701 -1
$3 cav_un_auth*0016644 $a Rehspringer $b J. L. $y FR $4 070 701 -1
$3 cav_un_auth*0044266 $a Lévy $b R. $y FR $4 070
Number of the records: 1