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InAs/GaAs multiple quantum dot structures grown by LP-MOVPE
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SYSNO ASEP 0133087 Document Type J - Journal Article R&D Document Type Journal Article Subsidiary J Ostatní články Title InAs/GaAs multiple quantum dot structures grown by LP-MOVPE Author(s) Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Melichar, Karel (FZU-D)
Vorlíček, Vladimír (FZU-D) RID
Drbohlav, Ivo (FZU-D) RID, ORCID
Šimeček, Tomislav (FZU-D)Source Title Thin Solid Films. - : Elsevier - ISSN 0040-6090
Roč. 380, - (2000), s. 101-104Number of pages 4 s. Language eng - English Country NL - Netherlands Subject RIV BM - Solid Matter Physics ; Magnetism CEZ AV0Z1010914 - FZU-D Annotation Structures with self-organised InAs quantum dots in a GaAs matrix were grown by the pow pressuer metal-organic vapour phase epitaxy technique. Photoluminescence and atomic force microscopy were used as the main characterisation methods for the growth optimisation. Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 2001
Number of the records: 1