Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

Name: Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
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Nakahata, K.; Kamiya, T.; Fortmann, C. M.; Shimizu, I.; Stuchlíková, Hana; Fejfar, Antonín; Kočka, Jan

Number of the records: 1

Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

1.

SYSNO	0132974
Title	Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
Author(s)	Nakahata, K. (JP) Kamiya, T. (JP) Fortmann, C. M. (JP) Shimizu, I. (JP) Stuchlíková, Hana (FZU-D) Fejfar, Antonín (FZU-D)_{RID, ORCID, SAI} Kočka, Jan (FZU-D)_{RID, ORCID, SAI}
Source Title	Journal of Non-Crystalline Solids. 266-269, - (2000), s. 341-346. - : Elsevier
Document Type	Článek v odborném periodiku
Grant	IAA1010809 GA AV ČR - Academy of Sciences of the Czech Republic (AV ČR)
	GA202/98/0669 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z1010914 - FZU-D
Language	eng
Country	NL
Permanent Link	http://hdl.handle.net/11104/0030966

Number of the records: 1