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Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas

  1. 1.
    Nakahata, K. - Kamiya, T. - Fortmann, C. M. - Shimizu, I. - Stuchlíková, Hana - Fejfar, Antonín - Kočka, Jan
    Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas.
    Journal of Non-Crystalline Solids. 266-269, - (2000), s. 341-346. ISSN 0022-3093. E-ISSN 1873-4812
    R&D Projects: GA AV ČR IAA1010809; GA ČR GA202/98/0669
    Impact factor: 1.269, year: 2000
    http://hdl.handle.net/11104/0030966

Number of the records: 1  

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