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Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas
- 1.NAKAHATA, K., KAMIYA, T., FORTMANN, C. M., SHIMIZU, I., STUCHLÍKOVÁ, H., FEJFAR, A., KOČKA, J. Anisotropic carrier transport in preferentially oriented polycrystalline silicon films fabricated by very-high-frequency plasma enhanced chemical vapor deposition using fluorinated source gas. Journal of Non-Crystalline Solids. 2000, 266-269(-), 341-346. ISSN 0022-3093. E-ISSN 1873-4812.
Number of the records: 1