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InAs quantum dots in GaAs. Technology and luminescence properties

  1. 1.
    SYSNO0131651
    TitleInAs quantum dots in GaAs. Technology and luminescence properties
    Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
    Oswald, Jiří (FZU-D) RID, ORCID
    Pangrác, Jiří (FZU-D) RID, ORCID, SAI
    Melichar, Karel (FZU-D)
    Šimeček, Tomislav (FZU-D)
    Janda, Pavel (UFCH-W) RID, ORCID
    Source Title Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices. s. 207-210, High Technology. / Novák J.. - Dodrecht : Kluwer Academic Publishers, 1998
    ISBN0-7923-5013-8
    Conference International Workshop on Heterostructure Epitaxy and Devices, 12.10.1997-16.10.1997
    Document TypeKonferenční příspěvek (zahraniční konf.)
    Grant GA102/96/1703 GA ČR - Czech Science Foundation (CSF)
    GA202/95/0194 GA ČR - Czech Science Foundation (CSF)
    GA203/96/1090 GA ČR - Czech Science Foundation (CSF)
    Languageeng
    CountryNL
    Permanent Linkhttp://hdl.handle.net/11104/0029707
     

Number of the records: 1  

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