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InAs quantum dots in GaAs. Technology and luminescence properties
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SYSNO ASEP 0131651 Document Type C - Proceedings Paper (int. conf.) R&D Document Type Conference Paper Title InAs quantum dots in GaAs. Technology and luminescence properties Author(s) Hulicius, Eduard (FZU-D) RID, ORCID, SAI
Oswald, Jiří (FZU-D) RID, ORCID
Pangrác, Jiří (FZU-D) RID, ORCID, SAI
Melichar, Karel (FZU-D)
Šimeček, Tomislav (FZU-D)
Janda, Pavel (UFCH-W) RID, ORCIDISBN 0-7923-5013-8 Source Title Proceedings of the NATO Advanced Research Workshop on Heterostructure Epitaxy and Devices, High Technology. / Novák J.. - Dodrecht : Kluwer Academic Publishers, 1998 Pages s. 207-210 Action International Workshop on Heterostructure Epitaxy and Devices Event date 12.10.1997-16.10.1997 Country SK - Slovakia Language eng - English Country NL - Netherlands Subject RIV CF - Physical ; Theoretical Chemistry R&D Projects GA102/96/1703 GA ČR - Czech Science Foundation (CSF) GA202/95/0194 GA ČR - Czech Science Foundation (CSF) GA203/96/1090 GA ČR - Czech Science Foundation (CSF) Workplace Institute of Physics Contact Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579 Year of Publishing 1999
Number of the records: 1