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Preparation and properties of GaInP.sub.2./sub./GaAs heterostructures
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SYSNO 0105962 Title Preparation and properties of GaInP2/GaAs heterostructures Title Příprava a vlastnosti heterostruktur GaInP2/GaAs Author(s) Nohavica, Dušan (URE-Y)
Gladkov, Petar (URE-Y)
Žďánský, Karel (URE-Y)Source Title ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. s. 57-60. - Piscataway : IEEE, 2004 / Osvald J. ; Haščík Š. Conference Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./, Smolenice, 17.10.2004-21.10.2004 Document Type Konferenční příspěvek (zahraniční konf.) Grant ME 610 GA MŠMT - Ministry of Education, Youth and Sports (MEYS) CEZ AV0Z2067918 - URE-Y Language eng Country US Keywords semiconductors * photoluminescence * electric properties Permanent Link http://hdl.handle.net/11104/0013147
Number of the records: 1