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Preparation and properties of GaInP.sub.2./sub./GaAs heterostructures
- 1.0105962 - URE-Y 20040122 RIV US eng C - Conference Paper (international conference)
Nohavica, Dušan - Gladkov, Petar - Žďánský, Karel
Preparation and properties of GaInP2/GaAs heterostructures.
[Příprava a vlastnosti heterostruktur GaInP2/GaAs.]
ASDAM'2004. Proceedings of the Fifth International Conference on Advanced Semiconductor Devices and Microsystems. Piscataway: IEEE, 2004 - (Osvald, J.; Haščík, Š.), s. 57-60. ISBN 0-7803-8535-7.
[Advanced Semiconductor Devices and Microsystems - ASDAM'04 /5./. Smolenice (SK), 17.10.2004-21.10.2004]
R&D Projects: GA MŠMT ME 610
Institutional research plan: CEZ:AV0Z2067918
Keywords : semiconductors * photoluminescence * electric properties
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0013147
Number of the records: 1