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Properties of Erbium-Doped Gallium Nitride Films Prepared by RF Magnetron Sputtering in Microwave and Optical Technology
- 1.0105585 - UJF-V 20043128 RIV CZ eng G - Proceedings (international conference)
Prajzler, V. - Schröfel, J. - Hüttel, I. - Špirková, J. - Machovič, V. - Oswald, J. - Studnička, V. - Novotná, M. - Peřina, Vratislav - Pistora, J. (ed.) - Postava, K. (ed.) - Hrabovský, M. (ed.)
Properties of Erbium-Doped Gallium Nitride Films Prepared by RF Magnetron Sputtering in Microwave and Optical Technology.
[Magnetron Sputtering in Microwave and Optical Technology.]
Banmali S. Rawat: Bellihgham, 2004. 4 s. 294-297. ISBN 0-8194-5368-4. ISSN 0277-786X. WA.
[Proceedings of SPIE. Ostrava (CZ), 11.08.2003-15.08.2003]
R&D Projects: GA ČR GA104/03/0385
Institutional research plan: CEZ:AV0Z1048901
Keywords : magnetron sputtering * gallium nitride * erbium
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
The paper describes the preparation and properties of gallium nitride layers with erbium content.
Vlastnosti Galium nitridových vrstev dopovaných erbiem připravených rf magnetronovým naprašováním a jejich vlastnosti v mikrovlnné a optické technologii.
Permanent Link: http://hdl.handle.net/11104/0012822
Number of the records: 1