Elastic electron backscattering from silicon surfaces: effect of charge-carrier concentration

Number of the records: 1

SYSNO ASEP	0104231
Document Type	J - Journal Article
R&D Document Type	Journal Article
Subsidiary J	Ostatní články
Title	Elastic electron backscattering from silicon surfaces: effect of charge-carrier concentration
Title	Pružný odraz elektronů od povrchu křemíku: vliv koncentrace nosičů náboje
Author(s)	Zemek, Josef (FZU-D)_{RID, ORCID} Jiříček, Petr (FZU-D)_{RID, ORCID, SAI} Lesiak, B. (PL) Jablonski, A. (PL)
Source Title	Surface and Interface Analysis. - : Wiley - ISSN 0142-2421 Roč. 36, - (2004), s. 809-811
Number of pages	3 s.
Language	eng - English
Country	GB - United Kingdom
Keywords	elastic peak electron spectroscopy(EPES) ; inelastic mean free path(IMFP) ; elastic electron backscattering probability ; charge-carrier concentrations ; silicon
Subject RIV	BM - Solid Matter Physics ; Magnetism
R&D Projects	GA202/02/0237 GA ČR - Czech Science Foundation (CSF)
CEZ	AV0Z1010914 - FZU-D
Annotation	Silicon wafers, p- and n-doped with different free-carrier charge concentrations, were selected as model materials to study a possible influence of charge-carrier concentrations (or electrical conductivity) on measured elastic electron backscattering probabilities and electron inelastic mean free paths determined by elastic peak electron spectroscopy
Workplace	Institute of Physics
Contact	Kristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
Year of Publishing	2005

Number of the records: 1