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In-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells

  1. 1.
    SYSNO ASEP0100326
    Document TypeJ - Journal Article
    R&D Document TypeJournal Article
    Subsidiary JOstatní články
    TitleIn-plane magnetic field-dependent magnetoresistance of gated asymmetric double quantum wells
    TitleMagnetorezistence dvojitých kvantových jam s hradlem v paralelním magnetickém poli
    Author(s) Krupko, Yuriy (FZU-D)
    Smrčka, Ludvík (FZU-D) RID, ORCID
    Vašek, Petr (FZU-D) RID
    Svoboda, Pavel (FZU-D)
    Cukr, Miroslav (FZU-D)
    Jansen, L. (FR)
    Source TitlePhysica E: Low-Dimensional Systems and Nanostructures. - : Elsevier - ISSN 1386-9477
    Roč. 22, - (2004), s. 44-47
    Number of pages4 s.
    ActionInternational Conference on Electronic Properties of Two-Dimensional Systems /15./
    Event date14.07.2003-18.07.2003
    VEvent locationNara
    CountryJP - Japan
    Event typeWRD
    Languageeng - English
    CountryNL - Netherlands
    Keywordsdouble-layer two-dimensional electron system ; magnetotransport ; gate voltage
    Subject RIVBM - Solid Matter Physics ; Magnetism
    R&D ProjectsGA202/01/0754 GA ČR - Czech Science Foundation (CSF)
    CEZAV0Z1010914 - FZU-D
    AnnotationWe have investigated experimentally the magnetoresistance of strongly asymmetric gated double wells
    WorkplaceInstitute of Physics
    ContactKristina Potocká, potocka@fzu.cz, Tel.: 220 318 579
    Year of Publishing2005

Number of the records: 1  

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